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STN1NK80 ITR8403 25100 74AC1 EBAWU0 BC807 AHV2011 25100
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  2013.1.30 1/1 semiconductor technical data KDR720EL schottky barrier type diode revision no : 2 low current rectification and high speed switching. features h low forward voltage. h high reliability. h small package . maximum rating (ta=25 ? ) 1. anode 2. cathcde elp-2 b f f a i j dim millimeters a b c c d d e 2 1 2 1 e h h typ 0.36 typ 0.1 max 0.3 g j i g g 0.6 0.05 + _ 0.3 0.05 + _ 0.2 0.05 + _ 0.25 0.05 + _ 0.025 0.02 + _ 0.18 0.05 + _ 0.28 0.05 + _ electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit forward voltage v f i f =10ma - - 0.37 v reverse current i r v r =10v - - 7  a characteristic symbol rating unit reverse voltage v r 30 v average forward current i o 100 ma surge current(10ms) i fsm 0.5 a junction temperature t j -55 q 150 ? storage temperature range t stg -55 q 150 ?
2013.1.30 2/2 KDR720EL revision no : 2


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